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    • 6. 发明申请
    • NITRIDE LIGHT EMITTING DEVICE OF USING SUBSTRATE DECOMPOSITION PREVENTION LAYER AND MANUFACTURING METHOD OF THE SAME
    • 使用基板分解防止层的氮化物发光装置及其制造方法
    • WO2007015613A1
    • 2007-02-08
    • PCT/KR2006/003004
    • 2006-07-31
    • JANG, Goo-Hyun
    • JANG, Goo-Hyun
    • H01L33/00
    • H01L33/02H01L33/0079
    • A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B-N), silicon carbide (Si-C), and silicon carbon nitride (Si-C-N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.
    • 发光装置具有使用从由氮化硼(BN),碳化硅(Si-C)和氮化硅(Si-CN)组成的组中选择的至少一种作为基体的基板分解防止层, 并图案化成预定的形状; 形成在所述基板分解防止层上的n型氮化物覆盖层; 形成在所述n型氮化物覆盖层上的氮化物有源层; 形成在氮化物活性层上的p型氮化物覆盖层; 形成在p型氮化物覆盖层上的p型欧姆接触层; 形成在p型欧姆接触层上的p型电极焊盘; n型欧姆接触层,通过基板分解防止层的图案化区域与n型氮化物覆盖层电连接; 以及形成在n型欧姆接触层下面的n型电极焊盘。